Nondeteriorating Verwey Transition in 50 nm Thick Fe3O4 Films by Virtue of Atomically Flattened MgO Substrates: Implications for Magnetoresistive Devices
AI Osaka, D Toh, K Yamauchi, K Hattori… - ACS Applied Nano …, 2021 - ACS Publications
Perfect surfaces can upgrade the quality of the films grown on them and ensure that their
physical properties do not deteriorate. Here, an atomically flattened surface is …
physical properties do not deteriorate. Here, an atomically flattened surface is …
Methods of creating and observing atomically reconstructed vertical Si {100},{110}, and {111} side-surfaces
AN Hattori, S Takemoto, K Hattori… - Applied Physics …, 2016 - iopscience.iop.org
We demonstrated the creation of atomically ordered side-surfaces and examined the
perfection of the side-surface structures. Atomically reconstructed Si {100},{110}, and {111} …
perfection of the side-surface structures. Atomically reconstructed Si {100},{110}, and {111} …
Electric transport properties for three-dimensional angular-interconnects of Au wires crossing facet edges of atomically-flat Si {111} surfaces
S Takemoto, AN Hattori, K Hattori… - Japanese Journal of …, 2018 - iopscience.iop.org
The creation of atomically-ordered Si {111} 7× 7 facet structures on a Si (110) substrate is
realized for the first time. Au was deposited on atomically-flat {111} facet surfaces. The …
realized for the first time. Au was deposited on atomically-flat {111} facet surfaces. The …
A Simple interpolation model for the carrier mobility in trigate and gate-all-around silicon NWFETs
We compute the electron and hole mobilities in Trigate and gate-all-around silicon
nanowires (SiNWs) within the nonequilibrium Green's Function framework. We then derive a …
nanowires (SiNWs) within the nonequilibrium Green's Function framework. We then derive a …
Rigorous modeling and investigation of low-field hole mobility in silicon and germanium gate-all-around nanosheet transistors
The low-field hole mobility in p-type inversion-mode silicon (Si) and germanium (Ge)
nanosheet (NS) transistors is rigorously calculated by a physics-based theoretical model …
nanosheet (NS) transistors is rigorously calculated by a physics-based theoretical model …
A hydrodynamic model for silicon nanowires based on the maximum entropy principle
O Muscato, T Castiglione - Entropy, 2016 - mdpi.com
Silicon nanowires (SiNW) are quasi-one-dimensional structures in which the electrons are
spatially confined in two directions, and they are free to move along the axis of the wire. The …
spatially confined in two directions, and they are free to move along the axis of the wire. The …
Investigating Si (100) surface patterns as well as electrical states through integrating molecular dynamics simulations with density functional tight binding at atomic …
F Dai, L Zhang - Materials Today Communications, 2024 - Elsevier
The present work performs molecular dynamics simulations within model potential's
framework to investigate surface atoms' rearrangements, loading states, and stress …
framework to investigate surface atoms' rearrangements, loading states, and stress …
Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si (110) substrate using scanning tunneling microscopy
H Yang, AN Hattori, A Ohata, S Takemoto… - Japanese Journal of …, 2017 - iopscience.iop.org
Abstract A three-dimensional Si {111} vertical side-surface structure on a Si (110) wafer was
fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing …
fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing …
Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devices
We report that speed and energy efficiency of large-scale electronic structure simulations,
which target realistically sized systems consisting of multi-million atoms, can be hugely …
which target realistically sized systems consisting of multi-million atoms, can be hugely …
A variational quantum algorithm for tackling multi-dimensional Poisson equations with inhomogeneous boundary conditions
M Choi, H Ryu - arxiv preprint arxiv:2411.03009, 2024 - arxiv.org
We design a variational quantum algorithm to solve multi-dimensional Poisson equations
with mixed boundary conditions that are typically required in various fields of computational …
with mixed boundary conditions that are typically required in various fields of computational …