In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …

This work demonstrates the high-frequency and high-power performance capacity of GaN
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …

Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs)
on high resistive silicon (111) substrate for power applications are demonstrated in this …

We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …

High microwave-noise performance is realized in AlGaN/GaN metal-insulator semiconductor
high-electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using …

The influence of the semiconducting Si substrate on the performance of GaN-on-Si RF
technology is reviewed. Firstly, the formation of a parasitic conduction channel at the …

The realization of high-performance 0.1-mum gate AlGaN/GaN high-electron mobility
transistors (HEMTs) grown on high-resistivity silicon substrates is reported. Our devices …

A 55-nm T-gate high-electron-mobility transistor was fabricated with a quaternary barrier
AlGa (In) N/AlN/GaN heterostructure grown on a highly resistive Si substrate. The device …

Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head
double-deck T-shaped gate has been reported. The HEMTs with gate-length (of and source …