Oxygen is a common substitutional impurity in both AlN and GaN crystals. In the wurtzite 2H
phase it can be present in AlN up to concentrations of 1× 1021/cm3 while in GaN it can …

Three experiments were designed to test the efficacy of ideation procedures that involved
alternation of individual and group idea generation sessions (hybrid brainstorming) as …

(57) ABSTRACT A GaN crystal having up to about 5 mole percent of at least one of
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …

Deep level transient spectroscopy (DLTS) is used extensively to study defects in
semiconductors. We demonstrate that great care should be exercised in interpreting …

Two yellow luminescence bands related to different defects have been revealed in undoped
GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled YL1, has the zero …

The technological importance of III–V nitride semiconductors relies on their variety of
applications, which cover optical, optoelectronic and electronic devices capable of operating …

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a
dislocation density less than about 10 4 cm− 1, and having no tilt boundaries. A method of …

EP O 937 790 8, 1999 EP O966047 12/1999 EP 1 172 464 1, 2002 EP 1249 522 10, 2002
FR 2796 657 1, 2001 JP 11 171699 9, 1999 JP 200022212 A 1, 2000 WO WO96, 41906 …

High-resolution, variable-temperature photoluminescence studies of recombination
processes associated with excitons bound to donors in hydride-vapor-phase epitaxial GaN …

We find the recently developed strongly constrained and appropriately normalized (SCAN)
functional, now widely used in calculations of many materials, is not able to reliably describe …