Design for manufacturability and reliability in extreme-scaling VLSI

B Yu, X Xu, S Roy, Y Lin, J Ou, DZ Pan - Science China Information …, 2016 - Springer
In the last five decades, the number of transistors on a chip has increased exponentially in
accordance with the Moore's law, and the semiconductor industry has followed this law as …

Layout decomposition for triple patterning lithography

B Yu, K Yuan, D Ding, DZ Pan - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
As minimum feature size and pitch spacing further scale down, triple patterning lithography
is a likely 193 nm extension along the paradigm of double patterning lithography for 14-nm …

Understanding graphs in EDA: From shallow to deep learning

Y Ma, Z He, W Li, L Zhang, B Yu - Proceedings of the 2020 international …, 2020 - dl.acm.org
As the scale of integrated circuits keeps increasing, it is witnessed that there is a surge in the
research of electronic design automation (EDA) to make the technology node scaling …

Design for manufacturing with emerging nanolithography

DZ Pan, B Yu, JR Gao - … Aided Design of Integrated Circuits and …, 2013 - ieeexplore.ieee.org
In this paper, we survey key design for manufacturing issues for extreme scaling with
emerging nanolithography technologies, including double/multiple patterning lithography …

An efficient layout decomposition approach for triple patterning lithography

J Kuang, EFY Young - Proceedings of the 50th Annual Design …, 2013 - dl.acm.org
Triple Patterning Lithography (TPL) is widely recognized as a promising solution for
14/10nm technology node. In this paper, we propose an efficient layout decomposition …

Self-aligned double patterning aware pin access and standard cell layout co-optimization

X Xu, B Cline, G Yeric, B Yu, DZ Pan - Proceedings of the 2014 on …, 2014 - dl.acm.org
Self-Aligned Double Patterning (SADP) is being considered for use at the 10 nm technology
node and below for routing layers with pitches down to~ 50nm because it has better LER …

A predictive process design kit for three-independent-gate field-effect transistors

G Gore, P Cadareanu, E Giacomin… - 2019 IFIP/IEEE 27th …, 2019 - ieeexplore.ieee.org
The Three-Independent-Gate Field-Effect Transistor (TIGFET) is a promising beyond-CMOS
technology which offers many unique properties, such as (i) dynamic control of the device …

Layout decomposition approaches for double patterning lithography

AB Kahng, CH Park, X Xu, H Yao - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
In double patterning lithography (DPL) layout decomposition for 45 nm and below process
nodes, two features must be assigned opposite colors (corresponding to different …

Design rule evaluation framework using automatic cell layout generator for design technology co-optimization

K Jo, S Ahn, J Do, T Song, T Kim… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper proposes a complete and full automation framework of evaluating design rules
(DRs) to facilitate the process of design technology co-optimization (DTCO), which is highly …

A unified framework for simultaneous layout decomposition and mask optimization

Y Ma, W Zhong, S Hu, JR Gao, J Kuang… - … on Computer-Aided …, 2020 - ieeexplore.ieee.org
In advanced technology nodes, layout decomposition (LD) and mask optimization (MO) are
two key stages in integrated circuit design. Due to the inconsistency of the objectives of …