Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …

Power electronic devices are of great importance in modern society. After decades of
development, Si power devices have approached their material limits with only incremental …

-phase gallium oxide (-Ga2O3) has drawn significant attention due to its large critical electric
field strength and the availability of low-cost high-quality melt-grown substrates. Both …

Poor intrinsic thermal conductivity (TC) of beta-phase gallium oxide (-Ga2O3) poses
challenges to the thermal management of its devices. Various packaging-level cooling …

This paper presents the 2-D numerical simulation results of the heavy-ion induced single-
event burnout (SEB) and single event gate rupture (SEGR) in the depletion-mode gallium …

The ultra-wide bandgap (UWBG) energy (∼ 5.4 eV) of α-phase Ga 2 O 3 offers the potential
to achieve higher power switching performance and efficiency than today's power electronic …

Electron–phonon coupling thermal resistance in metals is a key factor affecting the thermal
boundary conductance (TBC) of metal–metal–dielectric systems. However, quantitatively …

Gallium oxide (Ga2O3) devices have shown remarkable potential for high-voltage, high-
power, and low-loss power applications. However, thermal management of packaging for …

β-Ga 2 O 3, despite its ultra-wide bandgap and excellent electrical properties, requires
heterogeneous integration with high thermal conductivity substrates like SiC for high-power …