Recent research interest in organic field‐effect transistor (FET) memory has shifted to the
functionality of photoprogramming in terms of its potential uses in multibit data storage and …

Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation
infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing …

Self‐powered broadband photodetectors exhibit excellent self‐powered and wide‐band
photoresponse from visible to infrared region and attract enormous attention due to their …

Currently, photodetectors based on metal-halide perovskites are the fastest-emergent
photovoltaics technology in terms of research and development. Lead-based perovskite …

The advancement of optoelectronic applications relies heavily on the development of high-
performance photodetectors that are self-driven and capable of detecting a wide range of …

The development of information sensing technology depends on overcoming the difficulties
of high‐performance broadband photodetection by develo** novel devices that …

Lead chalcogenide quantum dots (QDs) are one of the next generations of ideal narrow
bandgap infrared semiconductors, due to their succinct solution processing, low‐cost …

Currently, colloidal quantum dots (CQDs)-based photodetectors are widely investigated due
to their low cost and easy integration with optoelectronic devices. The requirements for a …

Hybrid nanocomposite photodetectors are ideal systems with substantial applications as
promising materials in the field of optoelectronics. In this study, the hydrothermal method …

The band gap is a crucial parameter of photovoltaic materials, which primarily affects their
applicability and performance. Therefore, predicting band gaps of targeted materials …