GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

Red micro-light-emitting diodes (μLEDs) have been generated significant interest for the
next generation μLEDs displays. It has been shown that the external quantum efficiency …

We investigated the performance of InGaN-based red/green micro-light-emitting diodes
(µLEDs) ranging from 98× 98 µ m 2 to 17× 17 µ m 2. The average forward voltage at 10 A/cm …

We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN
green micro-LED performance. Hydrogen passivation deactivates the surface region of p …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …

We demonstrated amber InGaN micro-light-emitting diodes (LEDs) with the peak
wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm 2. The amber …

A red nanowire LED with an InGaN bulk active region, directly grown on a p-Si (111)
substrate, is demonstrated. The LED exhibits relatively good wavelength stability upon …