Stability, reliability, and robustness of GaN power devices: A review
JP Kozak, R Zhang, M Porter, J Zhang, J Shi, DC Qi, L Chen, KHL Zhang - APL Materials, 2020 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Gallium nitride-based complementary logic integrated circuits
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
DC-DC converter topologies for electric vehicles, plug-in hybrid electric vehicles and fast charging stations: State of the art and future trends
This article reviews the design and evaluation of different DC-DC converter topologies for
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …