Stability, reliability, and robustness of GaN power devices: A review
JP Kozak, R Zhang, M Porter, J Zhang, J Shi, DC Qi, L Chen, KHL Zhang - APL Materials, 2020 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional …
H Zhang, F Liang, L Yang, Z Gao, K Liang… - Advanced …, 2024 - Wiley Online Library
High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …
recognition and processing of optical information. To fulfill massive and complex imaging …