AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Z Zhang, M Kushimoto, T Sakai… - Applied Physics …, 2019 - iopscience.iop.org
We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …
injection at room temperature and at a very short wavelength. The laser structure was grown …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
Z Zhang, M Kushimoto, A Yoshikawa… - Applied Physics …, 2022 - iopscience.iop.org
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics
Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
Sec‐eliminating the SARS‐CoV‐2 by AlGaN based high power deep ultraviolet light source
The world‐wide spreading of coronavirus disease (COVID‐19) has greatly shaken human
society, thus effective and fast‐speed methods of non‐daily‐life‐disturbance sterilization …
society, thus effective and fast‐speed methods of non‐daily‐life‐disturbance sterilization …
Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates
The performance characteristics of optically pumped laser heterostructures emitting in the
UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures …
UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures …