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We report the growth of electrically resistive, high quality vanadium-doped β-Gallium Oxide
(β-Ga 2 O 3) single crystals via the optical floating zone growth technique. The characteristic …
(β-Ga 2 O 3) single crystals via the optical floating zone growth technique. The characteristic …
Low On-Resistance and High Carrier Mobility in β-Ga2O3 Single-Crystal Substrates through Tantalum Do**
Do** and electron mobility play crucial roles in determining the conductivity of β-Ga2O3
single-crystal substrates. This work proposes tantalum (Ta) as an effective n-type dopant …
single-crystal substrates. This work proposes tantalum (Ta) as an effective n-type dopant …
On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method
DA Bauman, DI Panov, VA Spiridonov… - Functional Materials …, 2023 - World Scientific
Bulk crystals of β-Ga2O3 were successfully grown by the EFG (Stepanov) method. Analysis
of the material using an X-ray diffraction showed the high crystalline quality of the obtained …
of the material using an X-ray diffraction showed the high crystalline quality of the obtained …
Gallium Oxide‐Based Field Effect Transistors
The growing interest for power electronics devices demands suitable materials which can
perform in harsh conditions. Gallium oxide (Ga 2 O 3 \left(Ga\right)_2\left(O\right)_3) has …
perform in harsh conditions. Gallium oxide (Ga 2 O 3 \left(Ga\right)_2\left(O\right)_3) has …