Controlling the Phase Distribution of Single Bromide Quasi-2-Dimensional Perovskite Crystals via Solvent Engineering for Pure-Blue Light-Emitting Diodes

S Park, J Kim, GM Kim, J Park, S Lee… - … Applied Materials & …, 2024 - ACS Publications
To achieve pure-blue emission (460–470 nm), we manipulate the crystallization process of
the quasi-2D perovskite,(PBA) 2Cs n–1Pb n Br3 n+ 1, prepared by a solution process. The …

Three-dimensional resonant exciton in monolayer tungsten diselenide actuated by spin–orbit coupling

CS Tang, X Yin, M Yang, D Wu, MD Birowosuto, J Wu… - ACS …, 2019 - ACS Publications
The intricate features of many-body interactions and spin–orbit coupling play a significant
role in numerous physical phenomena. Particularly in two-dimensional transition metal …

Green to deep-red emissive carbon dot formation by C+ ion implantation on nitrogen beam created self-masked nano-template

S Bhowmick, J Mukherjee, M Ghosal, C Nayak… - …, 2024 - iopscience.iop.org
We report the formation of green to red emissive arrays of carbon dot on silicon-nitride nano-
templates by successive implantation of nitrogen and carbon broad ion beams. The …

Ge nanocrystals formed by furnace annealing of Ge (x)[SiO2](1− x) films: structure and optical properties

VA Volodin, AG Cherkov, AK Antonenko… - Materials Research …, 2017 - iopscience.iop.org
Abstract Ge (x)[SiO 2](1− x)(0.1⩽ x⩽ 0.4) films were deposited onto Si (0 0 1) or fused quartz
substrates using co-evaporation of both Ge and SiO 2 in high vacuum. Germanium …

Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime

YH Kuo, SH Chiu, CW Tien, SD Lin, WH Chang… - Nano …, 2020 - iopscience.iop.org
We report local nitride-stressor engineering in combination with quantum-size tunability in
Ge quantum dots (QDs) for tailoring photoluminescence (PL) wavelength and exciton …

Optoelectric charging-discharging of Ge nanocrystals in floating gate memory

C Palade, A Slav, AM Lepadatu, AV Maraloiu… - Applied Physics …, 2018 - pubs.aip.org
Photo-induced effects on charging and discharging of nanocrystals (NCs) in capacitor
memories with Ge NCs in an HfO 2 matrix as a floating gate layer are studied. The sequence …

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

VA Volodin, Z Rui, GK Krivyakin, AK Antonenko… - Semiconductors, 2018 - Springer
The study is concerned with light-emitting Ge nanocrystals formed during the annealing of
Ge x [SiO 2] 1–x films produced by the high-vacuum cosputtering of germanium and quartz …

Estudios ópticos en heteroestructuras de van der Waals mediante micro-fotoluminiscencia

P García García - 2024 - digibuo.uniovi.es
Este proyecto de fin de grado se centra en la investigación de heteroestructuras de van der
Waals utilizando la técnica de micro-fotoluminiscencia. El objetivo principal es estudiar las …

Charge trap** properties of Ge nanocrystals grown via solid-state dewetting

I Jadli, M Aouassa, S Johnston, H Maaref… - Journal of Alloys and …, 2018 - Elsevier
In the present work, we report on the charge trap** properties of Germanium Nanocrystals
(Ge NCs) self assembled on SiO 2 thin layer for promising applications in next-generation …

Формирование светоизлучающих в ИК-диапазоне нанокристаллов германия в плeнках Ge:SiO

ВА Володин, ГК Кривякин, АХ Антоненко… - Физика и техника …, 2018 - mathnet.ru
Проведены исследования светоизлучающих нанокристаллов германия,
сформированных в процессе отжигов плeнок Ge $ _ {x} $[SiO $ _ {2} $] $ _ {1-x} …