Graphene spintronics

W Han, RK Kawakami, M Gmitra, J Fabian - Nature nanotechnology, 2014 - nature.com
The isolation of graphene has triggered an avalanche of studies into the spin-dependent
physical properties of this material and of graphene-based spintronic devices. Here, we …

Spin Hall effects in metals

A Hoffmann - IEEE transactions on magnetics, 2013 - ieeexplore.ieee.org
Spin Hall effects convert charge currents into spin currents and vice versa even in
nonmagnetic conductors due to spin orbit coupling. This enables spin Hall effects to be …

Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Observation of the orbital Rashba-Edelstein magnetoresistance

S Ding, Z Liang, D Go, C Yun, M Xue, Z Liu, S Becker… - Physical review …, 2022 - APS
We report the observation of magnetoresistance (MR) that could originate from the orbital
angular momentum (OAM) transport in a permalloy (Py)/oxidized Cu (Cu*) heterostructure …

Electronic materials with nanoscale curved geometries

P Gentile, M Cuoco, OM Volkov, ZJ Ying… - Nature …, 2022 - nature.com
As the dimensions of a material shrink from an extended bulk solid to a nanoscale structure,
size and quantum confinement effects become dominant, altering the properties of the …

Nontrivial torque generation by orbital angular momentum injection in ferromagnetic-metal/ trilayers

J Kim, D Go, H Tsai, D Jo, K Kondou, HW Lee… - Physical Review B, 2021 - APS
Efficient electrical generation of torque is desired to develop innovative magnetic
nanodevices. The torque can be generated by charge to spin conversion of heavy-metal …

Indication of intrinsic spin Hall effect in and transition metals

M Morota, Y Niimi, K Ohnishi, DH Wei, T Tanaka… - Physical Review B …, 2011 - APS
We have investigated spin Hall effects in 4 d and 5 d transition metals, Nb, Ta, Mo, Pd, and
Pt, by incorporating the spin absorption method in the lateral spin valve structure, where …

Spin-transfer torque devices for logic and memory: Prospects and perspectives

X Fong, Y Kim, K Yogendra, D Fan… - … on Computer-Aided …, 2015 - ieeexplore.ieee.org
As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching

T Yang, T Kimura, Y Otani - Nature Physics, 2008 - nature.com
A number of proposed next-generation electronic devices, including novel memory elements
and versatile transistor circuits, rely on spin currents, that is, the flow of electron angular …

Thermal spin-transfer torque driven by the spin-dependent Seebeck effect in metallic spin-valves

GM Choi, CH Moon, BC Min, KJ Lee, DG Cahill - Nature physics, 2015 - nature.com
The coupling of spin and heat gives rise to new physical phenomena in nanoscale spin
devices. In particular, spin-transfer torque (STT) driven by thermal transport provides a new …