Interface‐Engineering Induced Swift and Controllable Solar‐Blind Photoresponse in Ga2O3/SiC Heterojunction Based on Unconventional Rectification …
Z Wang, K Han, H Huang, X Zhao… - Advanced Functional …, 2024 - Wiley Online Library
Ga2O3 photodetectors with demonstrated high sensitivity provide a potential subversive
scheme for solar‐blind photodetection. However, the planar structure and the relatively slow …
scheme for solar‐blind photodetection. However, the planar structure and the relatively slow …
Bridging the gap between surface physics and photonics
P Laukkanen, M Punkkinen, M Kuzmin… - Reports on Progress …, 2024 - iopscience.iop.org
Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …
as information and communication, lighting, and photovoltaics. In many current and future …
Hybrid PEDOT: PSS/SiC heterojunction UV photodetector with superior self-powered responsivity over A/W level
In this Letter, an ultraviolet photodetector constructed on a simple vertical PEDOT: PSS/SiC
hybrid heterojunction with superior self-powered performance was reported. Benefitting from …
hybrid heterojunction with superior self-powered performance was reported. Benefitting from …
High-performance self-powered solar-blind ultraviolet photodetector based on a 4H-SiC/ZnGa2O4 heterojunction and its application in optical communication
D Han, Y Yang, L Meng, S Hu, K Liu, H Lin… - Applied Physics …, 2023 - pubs.aip.org
With the urgent demand for low power consumption, environment-friendly, and portable
devices, self-powered solar-blind ultraviolet (UV) photodetectors that only rely on built-in …
devices, self-powered solar-blind ultraviolet (UV) photodetectors that only rely on built-in …
High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications
Although many refractory metals have been investigated as the choice of contact metal in 4H-
SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for …
SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for …
Highly Sensitive Photovoltaic-Type DUV Detector Based on SnO Quantum Dots
H Kan, Z Lin, Z Wang, S Gao, W Yang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Quantum dots (QDs) deep ultraviolet (DUV) photodetectors have attracted extensive
attention due to their facile solution processability in recent years. Besides, photovoltaic …
attention due to their facile solution processability in recent years. Besides, photovoltaic …
Alpha Particle Detection Using Highly Rectifying Ni/GaO/4H-SiC Heteroepitaxial MOS Junction
We demonstrate for the first time heteroepitaxial metal-oxide–semiconductor (MOS)
structures as radiation detectors for harsh environment applications. The Ni/-Ga2O3/4H-SiC …
structures as radiation detectors for harsh environment applications. The Ni/-Ga2O3/4H-SiC …
Impact of material anisotropy on ultrafast laser dicing of SiC wafers for enhancing efficiency and quality
R Gao, C Wang, Q Zhang, L ** profiles of internal electric fields in
birefringent crystals based on the electro-optic Pockels effect and measuring phase …
birefringent crystals based on the electro-optic Pockels effect and measuring phase …
Self-biased (p+)Diamond/(n)4H-SiC vertical Schottky diodes for UV detection
We present a groundbreaking advancement in ultraviolet (UV) radiation detection
technology through the fabrication of a novel (p+) BDD/(n) 4H-SiC heterojunction Schottky …
technology through the fabrication of a novel (p+) BDD/(n) 4H-SiC heterojunction Schottky …