GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel
length, Lg= 5 nm based on fully ballistic quantum transport simulations. Our simulation …

In this paper, the effect of negativecapacitance (NC) on germanium FinFET (GeFinFET) with
the presence of fixed trap charges (Nftc) has been studied. The analysis of various …

In this paper, Si tunnel FETs (TFETs) with the vertical tunneling junction (nVTFETs) were
demonstrated by utilizing fabrication processes compatible to those used for conventional Si …

This paper explores the consequences of introducing a piezoelectric gate barrier in a normal
field-effect transistor. Because of the positive feedback of strain and piezoelectric charge …

Sub-60-mV/decade subthreshold slope (SS) without the cost of hysteresis using smart
electrostrictive-piezoelectric gate insulator of a field-effect transistor is presented. This …

Moore's law predicts an exponential growth of the number of transistors on integrated
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …

Tunable capacitors based on electrostriction in piezoelectric barriers are presented.
Electrostriction leads to a modulation of the piezoelectric barrier layer thickness caused by …

The demand for enhancement of computational performance has been primarily driven by
the continued scaling of CMOS transistors. However, as gate lengths approach single digits …

Abstract Since tradition planar Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs) has reached their scaling limit, further miniaturization, without degradation of …