Growth of nanowires

N Wang, Y Cai, RQ Zhang - Materials Science and Engineering: R: Reports, 2008 - Elsevier
The tremendous interest in nanoscale structures such as quantum dots (zero-dimension)
and wires (quasi-one-dimension) stems from their size-dependent properties. One …

Nanoparticle catalysts

AZ Moshfegh - Journal of Physics D: Applied Physics, 2009 - iopscience.iop.org
In this review, the importance of nanoparticles (NPs), with emphasis on their general and
specific properties, especially the high surface-to-volume ratio (A/V), in many technological …

[ΒΙΒΛΙΟ][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Growth kinetics and crystal structure of semiconductor nanowires

VG Dubrovskii, NV Sibirev, JC Harmand, F Glas - Physical Review B …, 2008 - APS
Theoretical model for the growth of semiconductor nanowires is developed, which enables
one to determine the growth conditions under which the formation of nanowires is possible …

Semiconductor nanowhiskers: synthesis, properties, and applications

VG Dubrovskii, GE Cirlin, VM Ustinov - Semiconductors, 2009 - Springer
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov… - Physical Review B …, 2009 - APS
We present a general model for the vapor-liquid-solid nanowire (NW) growth rates which
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …

Direct observation of nanoscale size effects in Ge semiconductor nanowire growth

SA Dayeh, ST Picraux - Nano letters, 2010 - ACS Publications
Progress in the synthesis of semiconductor nanowires (NWs) has prompted intensive inquiry
into understanding the science of their growth mechanisms and ultimately the technological …

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

CB Maliakkal, D Jacobsson, M Tornberg… - Nature …, 2019 - nature.com
Semiconductor nanowires offer the opportunity to incorporate novel structures and
functionality into electronic and optoelectronic devices. A clear understanding of the …

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

M Tchernycheva, C Sartel, G Cirlin, L Travers… - …, 2007 - iopscience.iop.org
This paper reports on the growth, structural and optical properties of GaN free-stranding
nanowires synthesized in catalyst-free mode on Si (111) substrate by plasma-assisted …

Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts

DL Dheeraj, G Patriarche, H Zhou, TB Hoang… - Nano …, 2008 - ACS Publications
We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a
zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface …