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[HTML][HTML] Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
GaN-on-Si power technology: Devices and applications
In this paper, we present a comprehensive review and discussion of the state-of-the-art
device technology and application development of GaN-on-Si power electronics. Several …
device technology and application development of GaN-on-Si power electronics. Several …
Gallium nitride-based complementary logic integrated circuits
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
The 2018 GaN power electronics roadmap
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
[HTML][HTML] An overview of normally-off GaN-based high electron mobility transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …
become mandatory to improve the energy efficiency of devices and modules and to reduce …
2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination
In this study, we fabricated superb-Ga2O3 Schottky barrier diodes (SBDs) with high
breakdown voltage (and low leakage through combining platinum oxide (PtO and anodic …
breakdown voltage (and low leakage through combining platinum oxide (PtO and anodic …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal
and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with …
and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with …
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs
In this paper, we carried out a systematic investigation on gate degradation and the physical
mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The …
mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The …
Novel in-situ AlN/p-GaN gate HEMTs with threshold voltage of 3.9 V and maximum applicable gate voltage of 12.1 V
Y Wu, S Liu, J Zhang, S Zhao, X Li… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on
p-GaN cap layer. Compared with conventional p-GaN gate HEMT, the threshold voltage of in …
p-GaN cap layer. Compared with conventional p-GaN gate HEMT, the threshold voltage of in …