Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …

A simple model that links MOSFET performance, in the form of intrinsic switch delay, to
effective carrier velocity in the channel is developed and fitted to historical data. It is shown …

Since the end of the last millenium, the microelectronics industry has been facing new
issues as far as CMOS devices scaling is concerned. Linear scaling will be possible in the …

The combination of channel mobility-enhancement techniques such as strain engineering
with nonclassical MOS device architectures, such as ultrathin-body (UTB) or double-gate …

An interdiffusivity model was established for SiGe interdiffusion under tensile or relaxed
strain over the full Ge content (x Ge) range (0≤ x Ge≤ 1), which is based on the correlations …

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe: C
have been widely used and under extensive research for applications in major …

The impact of different processing factors on the low-frequency (LF) noise of nMOSFETs
fabricated in strained-silicon (SSi) substrates will be described. It is shown that the use of an …

Rapid thermal processing (RTP) is a key technology in the fabrication of advanced
integrated circuits, with a wide range of applications, including titanium silicide and nitride …

Single-wafer rapid thermal processing, which has become indispensable in the present-day
manufacture of integrated circuits, has replaced batch furnace processing to satisfy device …

We investigate B diffusion in strained Si by using density functional theory calculations. We
calculate the migration barriers and formation energies of the B-Si complexes at different …