The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on
p-GaN cap layer. Compared with conventional p-GaN gate HEMT, the threshold voltage of in …

In this article, we systematically investigate the OFF-state drain-voltage-stress-induced
threshold voltage () instability in Schottky-type p-GaN gate high electron mobility transistors …

To assess GaN power transistors' capability to maintain a decent enhancement-mode
operation under high voltage switching operation, the impact of negative threshold voltage …

In this work, the effect of in situ SiNx grown with different carrier gas on the structural and
electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is studied. It was found that the …

In this article, the impacts of the off-state gate bias (V GS, OFF) on dynamic on-resistance (R
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …

Schottky-type p-GaN gate gallium nitride high electron mobility transistors suffer from
threshold voltage () instability phenomenon. Both positive and negative shifts are reported …

Pulse test techniques are widely adopted in characterizing both the static and dynamic
performances of semiconductor devices considering various device structures and operating …

In this letter, the dynamic R on degradation mechanisms of the p-GaN gate HEMTs induced
by off-state stress are investigated with different passivation dielectrics AlON and SiN. The …