This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

Today's explosion of data urgently requires memory technologies capable of storing large
volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane …

New storage-class memory (SCM) technologies, such as phase-change memory, STT-RAM,
and memristors, promise user-level access to non-volatile storage through regular memory …

Memory scaling is in jeopardy as charge storage and sensing mechanisms become less
reliable for prevalent memory technologies, such as DRAM. In contrast, phase change …

Modern computer systems have been built around the assumption that persistent storage is
accessed via a slow, block-based interface. However, new byte-addressable, persistent …

Phase-change may enable continued scaling of main memories, but PCM has higher
access latencies, incurs higher power costs, and wears out more quickly than DRAM. This …

In this paper, we propose PDRAM, a novel energy efficient main memory architecture based
on phase change random access memory (PRAM) and DRAM. The paper explores the …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

A detailed investigation of the reliability aspects in nonvolatile phase-change memories
(PCM) is presented, covering the basic aspects related to high density array NVM, ie, data …

In this paper, a 90-nm 128-Mcell non-volatile memory based on phase-change
Ge_2\mathchar"707BSb_2\mathchar"707BTe_5 alloy is presented. Memory cells are bipolar …