The objective of this paper is to present an overview of topics related to one of the
fundamental parameters for semiconductor lasers-the linewidth broadening factor α that …

Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile
material system with unique physical properties for a wide range of device applications. With …

The transmission and processing of signals carried by optical beams rather than by
electrical currents or radio waves has been a topic of great interest ever since the early …

THE develo** field of nanotechnology has generated wide interest across a broad range
of scientific disciplines1. In particular, the realization of nanoscale switching devices might …

We discuss a number of theoretical and experimental issues in quantum well lasers with
emphasis on the basic behavior of the gain, the field spectrum, and the modulation …

An overview is given of the direct modulation performance of high-speed semiconductor
lasers, The high-speed response characteristics are described using a cascaded two-port …

We describe a new formalism for determining energy eigenstates of spherical quantum dots
and cylindrical quantum wires in the multiple-band envelope-function approximation. The …

We investigate theoretically a number of important issues related to the performance of
AlGaAs quantum well (QW) semiconductor lasers. These include a basic derivation of the …

LATERAL confinement of electrons or excitons in low-dimensional semiconductor structures
(quantum 'wires' and 'boxes') leads to new electronic properties1, which can be used to …

Our recent progress in GaN-based quantum dots (QDs) for optoelectronics application is
discussed. First, we discussed an impact of the use of GaN-based QDs on semiconductor …