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450 meV hole localization in GaSb/GaAs quantum dots
The electronic properties of self-organized GaSb quantum dots (QDs) embedded in GaAs n+
p diodes were investigated by capacitance–voltage and deep level transient spectroscopy …
p diodes were investigated by capacitance–voltage and deep level transient spectroscopy …
High‐field magneto‐photoluminescence of semiconductor nanostructures
M Hayne, B Bansal - Luminescence, 2012 - Wiley Online Library
We review the photoluminescence of semiconductor nanostructures in high magnetic fields,
concentrating on the effects of the applied magnetic field on orbital motion (wave function …
concentrating on the effects of the applied magnetic field on orbital motion (wave function …
Excitonic structure and pum** power dependent emission blue-shift of type-II quantum dots
P Klenovský, P Steindl, D Geffroy - Scientific Reports, 2017 - nature.com
In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
Temporal evolution of GaSb/GaAs quantum dot formation
L Müller-Kirsch, R Heitz, UW Pohl… - Applied Physics …, 2001 - ui.adsabs.harvard.edu
The formation of GaSb quantum dots in a GaAs matrix in the Stranski-Krastanow growth
mode under metalorganic chemical vapor deposition conditions is investigated …
mode under metalorganic chemical vapor deposition conditions is investigated …
Electron localization by self-assembled GaSb/GaAs quantum dots
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum
dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are …
dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are …
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
PJ Carrington, AS Mahajumi, MC Wagener… - Physica B: Condensed …, 2012 - Elsevier
We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of
type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing …
type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing …
Self-assembled growth of GaSb type II quantum ring structures
S Kobayashi, C Jiang, T Kawazu… - Japanese journal of …, 2004 - iopscience.iop.org
We demonstrate the self-assembled growth of GaSb quantum ring structures by molecular
beam epitaxy. GaSb rings with the internal and external diameters of about 20 nm and 60 …
beam epitaxy. GaSb rings with the internal and external diameters of about 20 nm and 60 …
Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots
J Tatebayashi, A Khoshakhlagh, SH Huang… - Applied Physics …, 2006 - pubs.aip.org
The authors report the formation and optical characteristics of type-II, strain-relieved, and
densely stacked Ga Sb∕ Ga As quantum dots (QDs) using an interfacial misfit (IMF) growth …
densely stacked Ga Sb∕ Ga As quantum dots (QDs) using an interfacial misfit (IMF) growth …
Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra
C Jiang, H Sakaki - Physica E: Low-dimensional Systems and …, 2005 - Elsevier
The intermixing of Sb and As atoms induced by rapid thermal annealing (RTA) was
investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular …
investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular …
[PDF][PDF] Structural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates
YK Noh, YJ Hwang, MD Kim, YJ Kwon… - JOURNAL-KOREAN …, 2007 - researchgate.net
Antimony-based compounds offer a wide range of electronic band gaps, band-gap offsets,
and electronic barriers along with extremely high electron mobility, thereby enabling a …
and electronic barriers along with extremely high electron mobility, thereby enabling a …