A lightweight space-based solar power generation and transmission satellite

B Abiri, M Arya, F Bohn, A Fikes, M Gal-Katziri… - arxiv preprint arxiv …, 2022 - arxiv.org
We propose a novel design for a lightweight, high-performance space-based solar power
array combined with power beaming capability for operation in geosynchronous orbit and …

A radiation-hardened instrumentation amplifier for sensor readout integrated circuits in nuclear fusion applications

K Jeong, D Ro, G Lee, M Kang, HM Lee - Electronics, 2018 - mdpi.com
A nuclear fusion reactor requires a radiation-hardened sensor readout integrated circuit (IC),
whose operation should be tolerant against harsh radiation effects up to MGy or higher. This …

Comparison of various factors affected TID tolerance in FinFET and nanowire FET

H Won, I Ham, Y Jeong, M Kang - Applied Sciences, 2019 - mdpi.com
Analysis of the radiation effects in a device is of great importance. The gate all around (GAA)
structure that contributes to device scaling not only solves the short channel effects (SCE) …

A 65 nm rad-hard bandgap voltage reference for LHC environment

T Vergine, M De Matteis, S Michelis… - … on Nuclear Science, 2016 - ieeexplore.ieee.org
A radiation-hard BGR (bandgap voltage reference) circuit is here presented. It's able to
maintain the output voltage accuracy over process, voltage, and temperature (PVT) …

Analysis of circuit simulation considering total ionizing dose effects on finfet and nanowire fet

H Won, M Kang - Applied Sciences, 2021 - mdpi.com
In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET
and Nanowire FET (NW-FET) according to the structural aspect through comparison of the …

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

CM Andreou, DM González-Castaño, S Gerardin… - Electronics, 2019 - mdpi.com
The radiation tolerance of subthreshold reference circuits for space microelectronics is
presented. The assessment is supported by measured results of total ionization dose and …

Radiation-hardened CMOS negative voltage reference for aerospace application

F Liu, F Yang, H Wang, X **ang, X Zhou… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
Voltage reference is the key module in analog and mixed-signal integrated circuits. This
paper presents a radiation-hardened CMOS negative voltage reference for aerospace …

Rad-hard mixed-signal ic design, theory and implementation

C Calligaro, U Gatti - Next-Generation ADCs, High-Performance Power …, 2020 - Springer
In some environments such as space and avionics, it is required that the electronic
components have a certain level of radiation hardness, in terms of total ionizing dose (TID) …

Total dose effects on voltage references in 130-nm CMOS technology

DM Colombo, A Rosseto, GI Wirth… - … on Device and …, 2017 - ieeexplore.ieee.org
This paper investigates the impact of total ionizing dose (TID) effects on the performance of
CMOS voltage reference circuits. Four circuits were designed using a commercial 130-nm …

Search for Supersymmetry with Multiple Charged Leptons at sqrt {s}= 13 TeV with CMS and Radiation Tolerance of the Readout Chip for the Phase I Upgrade of the …

JH Hoss - 2017 - research-collection.ethz.ch
The present dissertation documents contributions to two complementary aspects of high-
energy particle physics research with the Compact Muon Solenoid (CMS) experiment at the …