The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
The RuO2-doped organic polymer composite structure was used as the interface to study
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical …
Electrical, kinetic and photoelectrical properties of CuAlMnMg shape memory alloy/n-Si Schottky diode
CA Canbay, A Tataroğlu, A Dere, AG Al-Sehemi… - Journal of Alloys and …, 2021 - Elsevier
In this study, the copper-aluminum-manganese-magnesium (Cu–Al–Mn–Mg) shape memory
alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics …
alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics …
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
H Durmuş, A Tataroğlu, Ş Altındal, M Yıldırım - Current Applied Physics, 2022 - Elsevier
Schottky diodes still attract researchers as they are used in various device applications. This
study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ B0) …
study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (Φ B0) …
Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes
P Harishsenthil, J Chandrasekaran, R Marnadu… - Physica B: Condensed …, 2020 - Elsevier
The presence of high dielectric material between the metal and semiconductor interface
played a significant role in many electronic device applications. In this work, we have …
played a significant role in many electronic device applications. In this work, we have …
The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate
Abstract Yttrium oxide (Y 2 O 3) powder was used as an interface layer between metal (Al)
and semiconductor (p-Si). Y 2 O 3 powder was coated with a spin-coating method on the p …
and semiconductor (p-Si). Y 2 O 3 powder was coated with a spin-coating method on the p …
Amelioration of rectification properties of CuO nanostructures using surface modification
MJ Paul, R Suresh, R Marnadu, V Balasubramani - Optical Materials, 2022 - Elsevier
In the current work, CuO spherical and rod-shaped particles has been synthesized with help
of co-precipitation technique. XRD studies reveal the presence of phase reversal of CuOH to …
of co-precipitation technique. XRD studies reveal the presence of phase reversal of CuOH to …
Determination of surface morphology and electrical properties of MoO3 layer deposited on GaAs substrate with RF magnetron sputtering
Ç Çetinkaya, E Cokduygulular, Y Özen… - Journal of Materials …, 2021 - Springer
We report the effects of the substrate temperature on the surface morphology of
Molybdenum tri-oxide (MoO 3) thin films and the electrically detailed examination of Au/MoO …
Molybdenum tri-oxide (MoO 3) thin films and the electrically detailed examination of Au/MoO …
Impact of Substrate Temperature on the Properties of Rare-Earth Cerium Oxide Thin Films and Electrical Performance of p-Si/n-CeO2 Junction Diode
R Siva Prakash, C Mahendran… - Journal of Inorganic and …, 2020 - Springer
In this work, we report a p-Si/n-CeO 2 junction diode fabricated by a cost-effective and large-
area deposition technique of jet nebulizer spray pyrolysis. The n-CeO 2 layer was coated on …
area deposition technique of jet nebulizer spray pyrolysis. The n-CeO 2 layer was coated on …
CuAlMnV shape memory alloy thin film based photosensitive diode
CA Canbay, A Tataroğlu, WA Farooq, A Dere… - Materials Science in …, 2020 - Elsevier
In the present work, the polycrystalline quaternary shape memory alloy (SMA) using
composition of Cu-10.24 Al-3.13 Mn-0.41 V (wt%) was prepared with arc melting technique …
composition of Cu-10.24 Al-3.13 Mn-0.41 V (wt%) was prepared with arc melting technique …
Exploring the Temperature-Dependent Microelectrical Characteristics of Organic-Silicon Heterojunctions in the Absence of Luminance
Akash, JP Tiwari - ACS Applied Energy Materials, 2024 - ACS Publications
An organic–silicon (O/S) interface represents a fundamental heterojunction in
semiconductor technology with significant implications for the advancement of electronic …
semiconductor technology with significant implications for the advancement of electronic …