Reliability differences between SiGe HBTs optimized for high-performance and medium-breakdown

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Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

ZR Brumbach, D Nergui, JW Teng… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
A comparison of laser-induced single-event transients (SETs) in silicon-germanium
heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed (HS) …
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Performance and Reliability Tradeoffs of Power Amplifier Cells Using High-Performance and Medium Breakdown SiGe HBTs

HP Lee, NE Sepúlveda-Ramos… - … on Electron Devices, 2025 - ieeexplore.ieee.org
In this work, the reliability and performance characteristics of silicon–germanium
heterojunction bipolar transistor (SiGe HBT) cascode amplifier cells are investigated. In …
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Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells

HP Lee, A Moradinia, JW Teng… - 2022 IEEE BiCMOS …, 2022 - ieeexplore.ieee.org
The purpose of this work is to investigate the performance-reliability tradeoffs of cascode
amplifier cells operating under high output voltage swing using both high performance (HP) …
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