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Fermi-level depinning of 2D transition metal dichalcogenide transistors
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in develo** extremely tiny sized (of a …
semiconductor (CMOS) technology have been used in develo** extremely tiny sized (of a …
Recent breakthroughs in two-dimensional van der Waals magnetic materials and emerging applications
Abstract Two-dimensional (2D) magnetism is now the attention of central demands in
fundamental condensed matter physics concerning about the understanding and control of …
fundamental condensed matter physics concerning about the understanding and control of …
Electronic properties of polymorphic two-dimensional layered chromium disulphide
Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI3,
Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X= Cl and Br) have attracted considerable attention …
Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X= Cl and Br) have attracted considerable attention …
High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit
Y Li, L Su, Y Lu, Q Luo, P Liang, H Shu, X Chen - InfoMat, 2023 - Wiley Online Library
A main challenge for the development of two‐dimensional devices based on atomically thin
transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …
transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …
Theoretical study of interfacial and electronic properties of transition metal dichalcogenides and organic molecules based van der Waals heterostructures
Heterostructures built from 2D materials and organic semiconductors offer a unique platform
for addressing many fundamental physics and construction of functional devices. Interfaces …
for addressing many fundamental physics and construction of functional devices. Interfaces …
Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact
X Niu, C Pan, A Shi, R Guan, W Shan, K Liu, X Lu… - Applied Surface …, 2023 - Elsevier
The rapid development of two-dimensional (2D) ferroelectric materials has significantly
facilitated the design of new electronic nanodevices. During preparation, the contact …
facilitated the design of new electronic nanodevices. During preparation, the contact …
Defected BN Substrate Induces the Transition from Schottky to Ohmic Contact in Two-Dimensional Metals–Semiconductor Junctions
Although Ohmic contact can be formed in two-dimensional (2D) metal–semiconductor
junctions (MSJs) due to the weak Fermi level pinning (FLP) effect, it is inconvenient to …
junctions (MSJs) due to the weak Fermi level pinning (FLP) effect, it is inconvenient to …
Progress on the program of Si-compatible two-dimensional semiconductor materials and devices
M Xu, Y Wang, J Liu, D Yang - Science China Information Sciences, 2024 - Springer
Abstract Two-dimensional (2D) materials are at the forefront of innovation, heralding a new
era for next-generation electronics and optoelectronics. These materials are distinguished …
era for next-generation electronics and optoelectronics. These materials are distinguished …
Enhancing the Contact Performance of Two-Dimensional Metals/In2S3 Junctions by the Self-Repair of Sulfur Vacancies in Air
C Pan, W Li, A Shi, W Zhang, H Shu, F Chi… - ACS Applied …, 2023 - ACS Publications
Compared with the bulk metals, two-dimensional (2D) materials are more conducive to
avoiding the occurrence of the strong Fermi-level pinning effect, showing great application …
avoiding the occurrence of the strong Fermi-level pinning effect, showing great application …
Device simulation of 5.1 nm high-performance field-effect transistors based on two-dimensional boron phosphide
S **g, Y Wang, W Chen, J Pan, W Li… - The Journal of …, 2022 - ACS Publications
The hexagonal boron phosphide (BP) has attracted much attention due to novel electronic
and optical properties. Here, we investigate the performance of the 5.1 nm field-effect …
and optical properties. Here, we investigate the performance of the 5.1 nm field-effect …