Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Photoelectric detectors are the central part of modern photodetection systems with
numerous commercial and scientific applications. p‐Type semiconductor materials play …

In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

Infrared photodetectors (IRPDs) have become important devices in various applications
such as night vision, military missile tracking, medical imaging, industry defect imaging …

Herein, we aim to evaluate the photodetector performance of various nanostructured
materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet …

The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

Numerous viral infections are common among humans, and some can lead to death. Even
though conventional antiviral agents are beneficial in eliminating viral infections, they may …

Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have
been widely reported because they are promising as an alternative for high-performance …

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an
important step towards integrated optical links. In the present work, we demonstrate scaled …