Structural and optical characteristics of epitaxially grown AlGaAsBi on GaAs for potential application in ultra-low noise avalanche photodiodes
The recent addition of Bi to GaAs has been demonstrated to be an effective method for
reducing excess noise in avalanche photodiodes (APDs), owing to the significant decrease …
reducing excess noise in avalanche photodiodes (APDs), owing to the significant decrease …
Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages
We present a quantitative analysis of Sb segregation in ultrathin GaAsSb films (1–20 ML)
grown with soaking/desorption methods. Sb soaking advances Sb incorporation almost to …
grown with soaking/desorption methods. Sb soaking advances Sb incorporation almost to …
Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …
InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors
Y Liang, W Zhou, X Su, N Li, F Chang, R **e, H Yu… - Optics …, 2024 - opg.optica.org
A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-
band bandgap engineered Ga_0. 51As_0. 49Sb/Al_0. 85Ga_0. 15AsSb/T2SL (In_0 …
band bandgap engineered Ga_0. 51As_0. 49Sb/Al_0. 85Ga_0. 15AsSb/T2SL (In_0 …
Interdiffusion induced changes in the absorption spectra of III-V quantum dot systems
III-V Semiconductor quantum dots (QDs) grown with growth interruption technique do not
have uniform group III composition inside the dot. Modelling such as-grown structures …
have uniform group III composition inside the dot. Modelling such as-grown structures …
Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different …
S Maleki, A Haghighatzadeh… - Journal of …, 2024 - spiedigitallibrary.org
A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in
this study using the V-shaped potential. An external static electric field (E-field) and a high …
this study using the V-shaped potential. An external static electric field (E-field) and a high …
[PDF][PDF] Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers. Nanomaterials 2023, 13, 798
For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …
Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
D González Robledo, S Flores Gallegos… - 2023 - rodin.uca.es
For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …