This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …

We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

Finding new collective electronic states in materials is one of the fundamental goals of
condensed matter physics. Atomic-scale superlattices formed from transition metal oxides …

Over the past two decades, magnetoelectric (ME) composites and their devices have been
an important topic of research. Potential applications ranging from low-power sensing to …

Spin transfer torque magnetic random access memory (STT-MRAM) has been widely
regarded as a potential nonvolatile memory candidate in the next-generation computer …

We review the recent progress in the development of magnetoelectric RAM (MeRAM) based
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …