We develop a device model for a heterostructure device with an electron channel and with a
periodic system of interdigitated gates. Using this model, we find the conditions of the self …

The conditions for THz radiation generation caused by electron transit-time resonance in
momentum and real spaces under optical phonon emission are analyzed for nitride-based …

Conditions required for the streaming effect and the optical-phonon transit-time resonance to
take place in a compensated bulk GaN are analyzed in detail. Monte Carlo calculations of …

We have presented the results of terahertz time-domain spectroscopy measurements and a
rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN …

We have analyzed low-temperature behavior of two-dimensional electron gas in polar
heterostructures subjected to a high electric field. When the optical phonon emission is the …

The study of devices to amplify the terahertz (THz) radiations is a subject of intense research
among the scientific community owing to its interdisciplinary applications. We explore the …

The theory of THz radiation transmission through the film of compensated GaN of cubic
modification under action of electric and magnetic fields has been developed. In the THz …

Low-temperature high-field electron transport is studied for compensated bulk GaN
subjected to crossed electric and magnetic fields. The electron kinetics, distribution function …

We investigate the relative transmission and the effective gain of a two‐dimensional electron
gas (2DEG) in the terahertz (THz) frequency domain. The position of THz source, device …

We report the results of the Monte Carlo simulation of electron dynamics in stationary and
space-and time-dependent electric fields in compensated GaN samples. We have …