The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Vertical growth rate of highly anisotropic III–V nanostructures, including the vapor–liquid–
solid or catalyst-free nanowires and quasi-one-dimensional nanomembranes obtained by …

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and
related epitaxy techniques offer several advantages over growth on unpatterned substrates …

Selective area epitaxy is a promising approach to define nanowire networks for topological
quantum computing. However, it is challenging to concurrently engineer nanowire …

Selective area epitaxy constitutes a mainstream method to obtain reproducible
nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate …

Selective area growth of nanomembranes (NMs), nanofins, and planar nanowires (NWs)
can pave the way for monolithic integration of III-V photonics with Si electronics and enable …

Herein, we present experimental data on the record length uniformity within the ensembles
of semiconductor nanowires. The length distributions of Ga-catalyzed GaAs nanowires …

Nanowire geometry allows semiconductor heterostructures to be obtained that are not
achievable in planar systems, as in, for example, axial superlattices made of large lattice …

We discuss the growth of semiconductor nanowires, with an emphasis on the vapor–liquid–
solid growth of III–V nanowires. Special attention is paid to modeling of growth and the …

We present experimental data on the length distributions of InAs nanowires grown by
chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au …