Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

During the last decade, Si/Si 1− x Ge x heterostructures have emerged as a viable system
for use in CMOS technology with the recent industrial production of heterojunction bipolar …

Two doses (10 13 and 10 15 cm− 2) of tungsten (W) atoms were implanted in different Si
(001) wafers in order to study W diffusion in Si. The samples were annealed or oxidized at …

The semi-conductor Ge 1―x Sn x exhibits interesting properties for optoelectronic
applications. In particular, Ge 1―x Sn x alloys with x≥ 0.1 exhibit a direct band-gap, and …

The ordering of islands on naturally or artificially nanostructured surfaces is one of the most
recent objectives among actual nanotechnology challenges. We show in this letter that, by a …

Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (100) by an
industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with …

Simultaneous nanometer-scale measurements of the strain and surface undulation
distributions of strained Si (s-Si) layers on strain-relief quadruple-Si 1-x Ge x-layer buffers …

The surfactant effect of Ga pre-deposited prior to ultrahigh vacuum (UHV) chemical vapor
deposition (CVD) of Ge on Si (001) is investigated using in situ transmission electron …

Abstract We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling
diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed …