Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

Rapid developments in the Internet of Things and Artificial Intelligence trigger higher
requirements for image perception and learning of external environments through visual …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional
(2D) semiconductor channels and ferroelectric Al0. 68Sc0. 32N (AlScN) allow high …

The emerging nonvolatile memory technologies based on ferroic materials are promising for
producing high‐speed, low‐power, and high‐density memory in the field of integrated …

Inorganic semiconductor materials are crucial for modern technologies, but their brittleness
and limited processability hinder the development of flexible, wearable, and miniaturized …

Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better
performance and integration than traditional oxide ferroelectrics with semiconductors such …

Interface engineering, by modulating defect distribution and impedance at interfaces and
inducing interfacial polarization, has proven to be an effective strategy for optimizing …