Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums… - Journal of Physics D …, 2010 - iopscience.iop.org
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
We systematically study the origins and mechanisms for unintentional incorporation of
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
[HTML][HTML] Type-I band alignment at MoS2/In0. 15Al0. 85N lattice matched heterojunction and realization of MoS2 quantum well
The valence and conduction band offsets (VBO and CBO) at the semiconductor
heterojunction are crucial parameters to design the active region of contemporary electronic …
heterojunction are crucial parameters to design the active region of contemporary electronic …
The influence of various MOCVD parameters on the growth of Al1− xInxN ternary alloy on GaN templates
H Kim-Chauveau, P De Mierry, JM Chauveau… - Journal of Crystal …, 2011 - Elsevier
We have studied the growth of AlInN lattice matched to GaN. We present the effect of reactor
pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the …
pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the …
Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy
The dislocation free In x Al 1-x N nanowires (NWs) are grown on Si (111) by nitrogen plasma
assisted molecular beam epitaxy in the temperature regime of 490 C–610 C yielding In …
assisted molecular beam epitaxy in the temperature regime of 490 C–610 C yielding In …
Influence of substrate temperature on the growth and properties of reactively sputtered In-rich InAlN films
Indium-rich InAlN films were prepared on Si (111) substrates by using reactive co-sputtering
in a mixed Ar-N 2 atmosphere. The substrate temperature was varied from room temperature …
in a mixed Ar-N 2 atmosphere. The substrate temperature was varied from room temperature …
Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
S Fan, M Ikeda, B Zhang, Z Li, X Su, Z Liu… - Journal of Alloys and …, 2024 - Elsevier
AlInN has emerged as a promising material for advanced optoelectronic and electronic
devices due to its unique properties. However, achieving AlInN layers with excellent surface …
devices due to its unique properties. However, achieving AlInN layers with excellent surface …
AlInN resistive ammonia gas sensors
We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas
sensor. It was found that surface morphology of the AlInN was rough with quantum dot like …
sensor. It was found that surface morphology of the AlInN was rough with quantum dot like …
Growth optimization and characterization of lattice-matched Al0. 82In0. 18N optical confinement layer for edge emitting nitride laser diodes
We present the growth optimization and the do** by the metal organic chemical vapor
deposition of lattice-matched Al0. 82In0. 18N bottom optical confinement layers for edge …
deposition of lattice-matched Al0. 82In0. 18N bottom optical confinement layers for edge …