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Pentagonal 2D Transition Metal Dichalcogenides: PdSe2 and Beyond
Abstract 2D materials with common hexagonal crystal structures, such as graphene,
hexagonal boron nitride, and transition metal dichalcogenides have attracted great interest …
hexagonal boron nitride, and transition metal dichalcogenides have attracted great interest …
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Nonhysteretic condition in negative capacitance junctionless FETs
This article analyzes the design space stability of negative capacitance double-gate
junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived …
junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived …
Steep-subthreshold slope dual gate negative capacitance junction less FET with dead channel: TCAD approach for digital/RF applications
In pursuit of lowering power densities and reducing energy efficiency constraints, execution
grid of arising electronic devices are being investigated to track down alternative options for …
grid of arising electronic devices are being investigated to track down alternative options for …
Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
Negative capacitance field effect transistors based on van der Waals 2D materials
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
Analytical model of subthreshold drain current for nanoscale negative capacitance junctionless FinFET
In this article, an analytical Subthreshold Drain Current model has been developed for
Negative Capacitance Junctionless FinFET (NC-JL FinFET). To obtain the subthreshold …
Negative Capacitance Junctionless FinFET (NC-JL FinFET). To obtain the subthreshold …
Design of low voltage-power: negative capacitance charge plasma FinTFET for AIOT data acquisition blocks
The advancement of technological improvement are revved up to introduce the notion of
Artificial Intelligence of Things (AIOT) to eliminate human interaction in operation of the …
Artificial Intelligence of Things (AIOT) to eliminate human interaction in operation of the …
Junction-less SOI FET with an Embedded p+ Layer: Investigation of DC, RF, and Negative Capacitance Characteristics
This paper presents a Junction-less SOI FET with an embedded p+ layer (EP-JLFET) to
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …
Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic …
The present reports an analytical modelling framework to provide insights into subthreshold
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …