Electrical characterization of coaxial silicon–insulator–silicon through-silicon vias:...

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Electrical modeling and characterization of silicon-core coaxial through-silicon vias in 3-D integration

L Qian, Y **ement utilizing through silicon via for integrated microsystems
CY Feng, L Aresti, P Zhang, DW Wang, WS Zhao… - Applied Thermal …, 2025 - Elsevier
In three-dimensional integrated circuits, variations in power consumption across different
regions lead to uneven temperature distribution, which can compromise system stability and …
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Performance comparison between copper and carbon nanotube based TSV for 3D-integrated circuits

K Rajkumar, GU Reddy - Materials Today: Proceedings, 2023 - Elsevier
This paper introduces the electrical equivalent circuit model of Cu-Multi walled Carbon
Nanotube Heterogeneous Coaxial Through Silicon Vias (Cu-MWCNT HCTSV). Multi-walled …
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Miniaturization strategy for directional couplers based on through-silicon via insertion and neuro-transfer function modeling method

W ** etching
Z Zhang, Y Ding, Z Chen, Y Wu… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
This letter presents the design and fabrication of a through-silicon-via (TSV) structure using
ultra-low-resistivity-silicon (ULRS) as the central conductor and air-gap as the insulation …
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High-aspect-ratio TSV process with thermomigration refilling of Au–Si eutectic alloy

P Zhong, C Dou, C Ye, K Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this study, a novel high-aspect-ratio through-silicon-via (TSV) with thermomigration
refilling of Au-Si eutectic alloy is presented, wherein a via-first polysilicon TSV is first …
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