This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …

This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID− V DS,
ID− V GS and gm), RF (such as cut off frequency, f T and maximum oscillation frequency …

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET
toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the …

Two particular defects are commonly discussed at the III-N interface: the required donor
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …

We correlate electical behaviors of recessed-gate Al 2 O 3/GaN MOS-FETs with the lattice
damage at MOS interface region by directly comparing plasma-etching (inductively coupled …

We report on the demonstration and investigation of Ta 2 O 5 as high-k dielectric for
InAlN/GaN-MOS high-electron mobility transistor (HEMT)-on-Si. Ta 2 O 5 of thickness 24 nm …

Determining the effect of different crystalline and amorphous passivation layers on the
electronic states and surface properties of III-nitride heterostructures is an important task …

Controlling properties of GaN/dielectric interfaces is crucial for determining the
characteristics of MOS-HEMT devices and their stability. Interface properties are largely …

The OFF-state stress-induced threshold voltage () instability and dynamic ON-resistance () of
GaN metal-oxide-semiconductor high-electron mobility transistor (MOSHEMT) with ZrO2 …