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Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers
This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs)
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer
M Siva Pratap Reddy, K Sreenu… - Journal of Materials …, 2017 - Springer
This paper reviews the electrical and transport properties of Ti/polyvinylpyrrolidone (PVP)/p-
InP metal/interlayer/semiconductor (MIS) Schottky diode and compared its results with the …
InP metal/interlayer/semiconductor (MIS) Schottky diode and compared its results with the …
Comparison of Al/TiO2/p-Si and Al/ZnO/p-Si photodetectors
The importance of the photodetectors has grown due to their potential in the automation
system and optical communications. We fabricated Al/TiO 2/p-Si and Al/ZnO/p-Si Schottky …
system and optical communications. We fabricated Al/TiO 2/p-Si and Al/ZnO/p-Si Schottky …
The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature
Abstract Au/n-Si (MS) and Au/(0.07 graphene-PVA)/n-Si (MPS) structures were fabricated on
the same wafer at identical conditions and their electrical characteristics have been …
the same wafer at identical conditions and their electrical characteristics have been …
Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface
In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements
SJ Moloi, JO Bodunrin - Journal of Materials Science: Materials in …, 2023 - Springer
In this study, the fabricated Al/p-Si Schottky diode is characterised at room temperature
using current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) techniques. The …
using current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) techniques. The …
[HTML][HTML] Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl …
Abstract Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure
and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic …
and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic …
The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements
T Ganj, SM Rozati, Y Azizian-Kalandaragh… - Journal of Materials …, 2023 - Springer
In this paper, the cerium-oxide nanostructures (CeO2) were synthesized by using the
hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2: PVC)-Si …
hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2: PVC)-Si …
[HTML][HTML] Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity …
In the present study, Schottky diodes (SDs) were produced with and without interlayer to
evaluate synthesis and characterization of pure and graphene (Gr)-doped organic/polymer …
evaluate synthesis and characterization of pure and graphene (Gr)-doped organic/polymer …
The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+ Monetite: PVC) interface layer
In this research work, by using biocompatible minerals as an additive, the electrical
response of the structure was measured, and its convenience in passivating N ss was …
response of the structure was measured, and its convenience in passivating N ss was …