[图书][B] Through silicon vias: materials, models, design, and performance

BK Kaushik, VR Kumar, MK Majumder, A Alam - 2016 - taylorfrancis.com
Recent advances in semiconductor technology offer vertical interconnect access (via) that
extend through silicon, popularly known as through silicon via (TSV). This book provides a …

High-speed interconnects: history, evolution, and the road ahead

VR Kumbhare, R Kumar, MK Majumder… - IEEE Microwave …, 2022 - ieeexplore.ieee.org
An integrated circuit (IC), or chip, is a set of electronic circuits and components placed on a
tiny planar silicon (Si) semiconductor substrate. These electronics circuits and components …

Structure fortification of mixed CNT bundle interconnects for nano integrated circuits using constraint-based particle swarm optimization

T Pathade, Y Agrawal, R Parekh… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The emerging VLSI technology and simultaneously highly dense packaging of devices and
interconnects in nano-scale chips have prosperously enabled realization of system-on-chip …

Pragmatic structure optimization: Achieving optimal crosstalk delay and gate oxide reliability of randomly mixed CNT bundle interconnects

R Sharma, MK Rai, R Khanna - Micro and Nanostructures, 2024 - Elsevier
This study explores the potential of randomly mixed carbon nanotube bundle (RMCB) as a
viable on-chip interconnect. Achieving high-quality carbon nanotubes (CNTs) with uniform …

Structure optimization: Configuring optimum performance of randomly distributed mixed carbon nanotube bundle interconnects

R Sharma, MK Rai, R Khanna - International Journal of Circuit …, 2023 - Wiley Online Library
This paper presents an efficient optimization strategy based on the Stoyan and Yaskov
algorithm to maximize the tube density of randomly distributed mixed carbon nanotube …

Effects of multi-walled carbon nanotubes on bipolar membrane properties

Y Liu, J Chen, R Chen, T Zhou, C Ke, X Chen - Materials Chemistry and …, 2018 - Elsevier
Fe 3+ is effective for improving water splitting and decreasing voltage drop of bipolar
membranes (BPMs), but such systems suffer from Fe 3+ loss during electrolysis. In the …

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

VR Kumbhare, PP Paltani… - IET Circuits, Devices & …, 2020 - Wiley Online Library
In recent past, the cross‐coupling crosstalk becomes a dominating factor due to the closer
proximity of wire that reduces the performance of coupled interconnects at lower technology …

Crosstalk Delay and Reliability Analysis of Carbon Nanotube On-Chip Interconnects: Modelling and Optimization using Metaheuristic Algorithm

R Sharma, MK Rai, R Khanna - IETE Journal of Research, 2024 - Taylor & Francis
In the field of VLSI technology, the miniaturization of ICs poses significant challenges to
overall interconnect performance, particularly due to the rising concerns of crosstalk-induced …

Transmission gate as buffer for carbon-nanotube-based VLSI interconnects

A Karthikeyan, PS Mallick - IETE Journal of research, 2018 - Taylor & Francis
In this paper, we propose transmission gates (TGs) as buffers/repeaters for carbon nanotube
(CNT)-based VLSI interconnects. Various performance metrics of the TG buffer, viz …

Modeling and analysis of carbon-nanotube interconnections for future nanotechnology interconnections between high speed CMOS integrated circuits using FDTD …

N Youssef, B Hassan, G Abdelilah… - E3S Web of …, 2022 - e3s-conferences.org
The size reduction of copper interconnects degrades their performances due to increased
surface scattering, which significantly reduces the effective electron mean free path. Unlike …