Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga2O3 (− 201)
single crystal were investigated by frequency-domain impedance spectroscopy in the …

Nonlinear electrical properties, such as negative differential resistance (NDR), are essential
in numerous electrical circuits, including memristors. Several physical origins have been …

Negative differential resistance (NDR) in certain materials has been attributed to
spontaneous emergence of symmetry‐breaking electrical current density localization from a …

The negative differential resistance (NDR) effect and magnetoresistance (MR) effect attract a
lot of attention since they have been widely applied in fields such as circuit amplifiers and …

The recently predicted quantum particles of the chemical bonding, the bondons, are
recognized as the elemental driving quasi-particle driving EPR (Einstein-Podolsky-Rosen) …

We investigate the transport properties of n‐type noncompensated silicon below the
insulator‐metal transition by measuring the electrical and magnetoresistances as a function …

In this work ZnO/GO (Graphene Oxide) deposited materials in 3Qubit configurations with the
arrangement of matrix-junctions are discussed, aiming to establish quantum transistor …

We report on the electric transport properties of Si heavily doped with Sb at concentration
just below the insulator-to-metal transition in the temperature range 1.9–3.0 K for current …

Negative differential resistance (NDR) effect has its research significance and application
value. However, the evolution of the NDR under magnetic fields (especially ultrahigh …

The present project" accepts the challenge" of overcoming Moore's law in complementary
metal-oxide semiconductor (CMOS) devices by modeling bondonic and bondotic quasi …