Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Numerical calculations of the quantum states in semiconductor nanostructures
In this review we describe the use of a powerful numerical tool to obtain quantum states of
semiconductor nanostructures. A detailed account of the numerical method is given and the …
semiconductor nanostructures. A detailed account of the numerical method is given and the …
Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field
In this work, the conduction band electron states and the associated intersubband-related
linear and nonlinear optical absorption coefficient and relative refractive index change are …
linear and nonlinear optical absorption coefficient and relative refractive index change are …
Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure
In this paper, the effects of hydrostatic pressure, the position and the concentration of Si δ-
doped layer on the intersubband transitions and absorption lineshape in GaAs quantum well …
doped layer on the intersubband transitions and absorption lineshape in GaAs quantum well …
Stark effect studied in-doped GaAs structures
We present a theoretical study of the subband structure of both single and periodically-
doped GaAs layers. We will discuss the influence of the-do** concentration and the-layer …
doped GaAs layers. We will discuss the influence of the-do** concentration and the-layer …
[HTML][HTML] Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor
This work theoretically investigates the impact of structural parameters on energy levels and
optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FE T. The …
optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FE T. The …
Electronic structure of n-type δ-do** multiple layers and superlattices in silicon
LMR Scolfaro, D Beliaev, R Enderlein, JR Leite - Physical Review B, 1994 - APS
The electronic subband structure of periodically n-type δ-doped silicon is calculated self-
consistently within the local-density approximation. Two types of energy levels are …
consistently within the local-density approximation. Two types of energy levels are …
Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields
We investigate the energy states of confined electrons in doped quantum structures with
Razavy-like confining potentials. The theoretical investigation is performed within the …
Razavy-like confining potentials. The theoretical investigation is performed within the …
Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure
J Osvald - Physica E: Low-dimensional Systems and …, 2004 - Elsevier
We have theoretically studied the influence of a position of a δ-doped layer relative to the
semiconductor surface on its electronic structure and a free charge carrier profile. The …
semiconductor surface on its electronic structure and a free charge carrier profile. The …
The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer
The intersubband transitions in Si δ-doped GaAs structures is theoretically investigated for
different applied electric fields. For an uniform distribution the electronic structure has been …
different applied electric fields. For an uniform distribution the electronic structure has been …
Band structure of holes in p-type δ-do** quantum wells and superlattices
Abstract p-type δ-do** quantum wells and superlattices are semiconductor systems of
considerable interest for basic research and device applications. In this paper, a method for …
considerable interest for basic research and device applications. In this paper, a method for …