Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …

We review the current understanding of intrinsic electron and hole trap** in insulating
amorphous oxide films on semiconductor and metal substrates. The experimental and …

Amorphous aluminum oxide Al 2 O 3 (a-Al 2 O 3) layers grown by various deposition
techniques contain a significant density of negative charges. In spite of several experimental …

Internal photoemission spectroscopy provides the most straightforward way to characterize
the relative energies of electron states at interfaces of insulators with metals and …

The crystallinity of atomic layer deposition hafnium oxide was found to be thickness
dependent, with the thinnest films being amorphous and thick films being at least partially …

The electron energy band alignment between (100) Si and several complex transition∕ rare
earth (RE) metal oxides (⁠ La Sc O 3⁠, Gd Sc O 3⁠, Dy Sc O 3⁠, and La Al O 3⁠, all in …

The monographic book addresses the basics of the charge carrier photoemission from one
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …

Analysis of photodepopulation of electron traps in HfO 2 films grown by atomic layer
deposition is shown to provide the trap energy distribution across the entire oxide bandgap …

Evolution of the electron energy band alignment at interfaces between different
semiconductors and wide‐gap oxide insulators is examined using the internal …