Semiconductor quantum dots for integrated quantum photonics
Quantum mechanics promises to have a strong impact on many aspects of research and
technology, improving classical analogues via purely quantum effects. A large variety of …
technology, improving classical analogues via purely quantum effects. A large variety of …
InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review
Long-distance quantum communication and computation is based on the exchange of
information via photons as flying qubits. In all foreseen implementations, from quantum …
information via photons as flying qubits. In all foreseen implementations, from quantum …
Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band
N Srocka, P Mrowiński, J Große… - Applied Physics …, 2020 - pubs.aip.org
In this work, we develop and study single-photon sources based on InGaAs quantum dots
(QDs) emitting in the telecom O-band. Quantum devices are fabricated using in situ electron …
(QDs) emitting in the telecom O-band. Quantum devices are fabricated using in situ electron …
Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm
By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs
substrate with an ultra-low lateral density (< 10 7 cm− 2). The photoluminescence …
substrate with an ultra-low lateral density (< 10 7 cm− 2). The photoluminescence …
Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot
We report on the experimental demonstration of triggered single-photon emission at the
telecom O-band from In (Ga) As/GaAs quantum dots (QDs) grown by metal-organic vapor …
telecom O-band from In (Ga) As/GaAs quantum dots (QDs) grown by metal-organic vapor …
On the principle operation of tunneling injection quantum dot lasers
The concept of tunneling injection was introduced in the 1990's to improve the dynamical
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …
Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer
F Olbrich, J Kettler, M Bayerbach, M Paul… - Journal of Applied …, 2017 - pubs.aip.org
We report on temperature-dependent investigations of single metal-organic vapor phase
epitaxy-grown In (Ga) As/GaAs quantum dots at wavelengths above 1 μm. Here, two types of …
epitaxy-grown In (Ga) As/GaAs quantum dots at wavelengths above 1 μm. Here, two types of …
Single-photon and photon pair emission from MOVPE-grown In (Ga) As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm
InAs quantum dots grown on a GaAs substrate have been one of the most successful
semiconductor material systems to demonstrate single-photon-based quantum optical …
semiconductor material systems to demonstrate single-photon-based quantum optical …
Neutral and charged biexciton-exciton cascade in near-telecom-wavelength quantum dots
We investigate the cascaded emission of photons from low-density InGaAs/GaAs quantum
dots grown by metal-organic vapor-phase epitaxy that are intentionally redshifted toward …
dots grown by metal-organic vapor-phase epitaxy that are intentionally redshifted toward …
Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Hereby, we present a comprehensive experimental and theoretical study of the electronic
structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs …
structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs …