Semiconductor quantum dots for integrated quantum photonics

S Hepp, M Jetter, SL Portalupi… - Advanced Quantum …, 2019 - Wiley Online Library
Quantum mechanics promises to have a strong impact on many aspects of research and
technology, improving classical analogues via purely quantum effects. A large variety of …

InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review

SL Portalupi, M Jetter, P Michler - Semiconductor Science and …, 2019 - iopscience.iop.org
Long-distance quantum communication and computation is based on the exchange of
information via photons as flying qubits. In all foreseen implementations, from quantum …

Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band

N Srocka, P Mrowiński, J Große… - Applied Physics …, 2020 - pubs.aip.org
In this work, we develop and study single-photon sources based on InGaAs quantum dots
(QDs) emitting in the telecom O-band. Quantum devices are fabricated using in situ electron …

Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

M Paul, J Kettler, K Zeuner, C Clausen, M Jetter… - Applied Physics …, 2015 - pubs.aip.org
By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs
substrate with an ultra-low lateral density (⁠< 10 7 cm− 2⁠). The photoluminescence …

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

Ł Dusanowski, P Holewa, A Maryński, A Musiał… - Optics express, 2017 - opg.optica.org
We report on the experimental demonstration of triggered single-photon emission at the
telecom O-band from In (Ga) As/GaAs quantum dots (QDs) grown by metal-organic vapor …

On the principle operation of tunneling injection quantum dot lasers

I Khanonkin, S Bauer, V Mikhelashvili, O Eyal… - Progress in Quantum …, 2022 - Elsevier
The concept of tunneling injection was introduced in the 1990's to improve the dynamical
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …

Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer

F Olbrich, J Kettler, M Bayerbach, M Paul… - Journal of Applied …, 2017 - pubs.aip.org
We report on temperature-dependent investigations of single metal-organic vapor phase
epitaxy-grown In (Ga) As/GaAs quantum dots at wavelengths above 1 μm. Here, two types of …

Single-photon and photon pair emission from MOVPE-grown In (Ga) As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm

J Kettler, M Paul, F Olbrich, K Zeuner, M Jetter… - Applied Physics B, 2016 - Springer
InAs quantum dots grown on a GaAs substrate have been one of the most successful
semiconductor material systems to demonstrate single-photon-based quantum optical …

Neutral and charged biexciton-exciton cascade in near-telecom-wavelength quantum dots

J Kettler, M Paul, F Olbrich, K Zeuner, M Jetter… - Physical Review B, 2016 - APS
We investigate the cascaded emission of photons from low-density InGaAs/GaAs quantum
dots grown by metal-organic vapor-phase epitaxy that are intentionally redshifted toward …

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

P Mrowiński, A Musiał, K Gawarecki, Ł Dusanowski… - Physical Review B, 2019 - APS
Hereby, we present a comprehensive experimental and theoretical study of the electronic
structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs …