Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light
sources with strong potential for applications in optical communication and sensing …

Impurity diffusivity in thin films of GaAs is affected by native defect concentrations which were
grown into the film, and which enter the film from both the substrate and the external …

Area selectivity of bandgap tuning in the InGaAsP-InP multiquantum-well structure has been
investigated using low temperature photoluminescence (PL). The bandgap blue-shift in the …

In this work, titanium dioxide (TiO 2) film was deposited onto the In 0.5 Ga 0.5 As/GaAs
quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion …

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using
dielectrics often results in lower quantum efficiency. In this paper, we report on an …

Interdiffusion of Al and Ga in Al0. 4Ga0. 6As/GaAs and Al0. 3Ga0. 2In0. 5P/Ga0. 6In0. 4P
quantum wells has been investigated by measuring the photoluminescence of samples …

We present what we believe is the highest efficiency and lowest threshold current density
ever reported for semiconductor ring resonator lasers. Ring lasers are interesting …

Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 C was
used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue …

High spatial band-gap tuning has been observed from an In Ga As∕ Ga As quantum-dot
(QD) structure implanted with electrically neutral species, As and P ions, at 200 C followed …

Results Effect of silane flow rate on QW intermixing.—Figure 1a illustrates typical PL spectra
of capped (solid line) and uncapped (dotted line) QW structures after RTA at 950C. In this …