Detection and impact of short-range order in medium/high-entropy alloys
Summary Medium/High-entropy alloys (MEAs/HEAs) have attracted much attention during
the past two decades and have been studied extensively owing to their excellent physical …
the past two decades and have been studied extensively owing to their excellent physical …
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …
Pyramidal structure formation at the interface between III/V semiconductors and silicon
An enhancement of computer performance following Moore's law requires the
miniaturization of semiconductor devices. Presently, their dimensions reach the nanoscale …
miniaturization of semiconductor devices. Presently, their dimensions reach the nanoscale …
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
High resolution STEM of quantum dots and quantum wires
S Kadkhodazadeh - Micron, 2013 - Elsevier
This article reviews the application of high resolution scanning transmission electron
microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs) …
microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs) …
Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM
The Sb concentration in axial GaAs1− xSbx inserts of otherwise pure GaAs nanowires has
been investigated with quantitative high-angle annular dark-field scanning transmission …
been investigated with quantitative high-angle annular dark-field scanning transmission …
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires
The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires
(NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle …
(NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle …
[HTML][HTML] Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure
A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced
chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm …
chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm …