Development of a simulator for analyzing some performance parameters of nanoscale strained silicon MOSFET-based CMOS inverters
Owing to the persisting technological importance of Strained-Si (S–Si) metal-oxide-
semiconductor field-effect transistors (MOSFETs) and the hurdles offered by source (S) and …
semiconductor field-effect transistors (MOSFETs) and the hurdles offered by source (S) and …
Effects of total dose radiation on single event effect of the uniaxial strained si nano NMOSFET
M Hao, Y Zhang, M Shao, G Chen… - IETE Journal of …, 2023 - Taylor & Francis
The effect of total dose radiation on the single event effect of uniaxial strained Si Nano
channel metal oxide semiconductor field effect transistor (NMOSFET) was studied by TCAD …
channel metal oxide semiconductor field effect transistor (NMOSFET) was studied by TCAD …
Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET
M Hao, H Hu, B Wang, C Liao, H Kang, H Su - Solid-State Electronics, 2017 - Elsevier
The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
Synthesis of Silyl Aluminum Reagents: Relevance Toward Atomic Layer Deposition of Metal Silicides and the Serendipitous Synthesis of a Novel Al-Hydride Cluster
The novel mono-silyl [(R3Si) AlX2] 2, di-silyl [(R3Si) 2AlX] 2, tri-silyl (R3Si) 3Al· Et2O, and-
ate-complex [(R3Si) 4Al]−· Li+ (Et2O) 2 have been synthesized by reaction of AlX3 (X= Cl …
ate-complex [(R3Si) 4Al]−· Li+ (Et2O) 2 have been synthesized by reaction of AlX3 (X= Cl …
Carbon-related defects in Si: C/silicon heterostructures assessed by deep-level transient spectroscopy
E Simoen, SK Dhayalan, A Hikavyy… - ECS Journal of Solid …, 2017 - iopscience.iop.org
This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of the electrically
active defects in∼ 100 nm Si: C stressors, formed by chemical vapor deposition on p-type …
active defects in∼ 100 nm Si: C stressors, formed by chemical vapor deposition on p-type …
Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET
MR Hao, HY Hu, CG Liao, B Wang, HY Kang… - Microelectronics …, 2017 - Elsevier
The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET
M Hao, H Hu, C Liao, H Kang, H Su… - IEICE Electronics …, 2017 - jstage.jst.go.jp
The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …
Study on amplitude of the noise power spectrum for nano-strained Si NMOSFET
M Hao, M Shao, Y Zhang, L Duan - Radiation Effects and Defects …, 2022 - Taylor & Francis
Based on the micro-transport mechanism of total dose to nano-strained Si MOS device, the
trapped charge is calculated. By solving the two-dimensional Poisson equation, the channel …
trapped charge is calculated. By solving the two-dimensional Poisson equation, the channel …
Study on the Effect of Through Silicon Vias in Mitigating Single Event Transient Current
C Liao, J Yan, M Hao, W Zhao, X Ma… - … of Nanoelectronics and …, 2020 - ingentaconnect.com
Based on the coaxial TSV structure, this paper studies the uniaxial strained Si nanoscale n-
channel metaloxide-semiconductor field-effect transistor (NMOSFET) single-particle effect …
channel metaloxide-semiconductor field-effect transistor (NMOSFET) single-particle effect …
Comprehensive stress effect of thin coatings and silicon–carbon lattice mismatch on nano-scaled transistors with protruding poly gate
CC Lee, PC Huang - Journal of Nanoscience and …, 2020 - ingentaconnect.com
Enhancing the mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with
narrow channel widths is highly sensitive to the stress effects of Si channel when related …
narrow channel widths is highly sensitive to the stress effects of Si channel when related …