We report experimental results on the low-frequency noise in GaN/AlGaN transistors
fabricated under different conditions and evaluate different methods to extract the effective …

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were
developed as the method for the investigation of high-frequency characteristics of two …

We demonstrate the high voltage switch based on a Mn-doped GaN semiconductor
involving sub-bandgap photo-excitation by means of Nd: YAG laser emitting in the second …

We investigated the carrier dynamics of ammonothermal Mn-compensated gallium nitride
(GaN: Mn) semiconductors by using sub-bandgap and above-bandgap photo-excitation in a …

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5±0.2% and
thickness of 9 nm was developed for high electron mobility transistor structures using the …

We report three approaches to development of electrically-pumped THz emitters based on III-
Nitride structures. The first approach entails the investigation of two-dimensional (2D) …

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two
lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor …

Terahertz spectroscopy of thermal radiation from electrically pumped AlGaN/GaN structures
on sapphire substrate was investigated in this work. Comparison of experimental THz …

The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor
(HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in …

We investigated radiative phenomena contributing to the THz emission of AlGaN/GaN high
electron mobility transistor (HEMT) structures grown on sapphire substrate. Electrically …