Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Point defects affect or even completely determine physical and chemical properties of
semiconductors. Characterization of point defects based on experimental techniques alone …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO 2)
thin films show high potential for future embedded nonvolatile memory applications …

Very recently, two-dimensional nanosheets of MoSe2, MoTe2 and WS2 were successfully
synthesized experimentally [Science, 2011, 331, 568]. In the present work, the electronic …

Low-dimensional perovskites are rapidly emerging due to their distinctive emission
properties, consisting of ultrabroad and highly Stokes shifted luminescence with pure white …

Resistive random access memory (RRAM) technologies based on non-volatile resistive
filament redox switching oxides have the potential of drastically improving the performance …

For the rather new hafnia-and zirconia-based ferroelectrics, a lot of questions are still
unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up,(2) …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …