AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

Gallium nitride (GaN) as a wide bandgap material is widely used in solid‐state lighting.
Thanks to its high nonlinearity and high refractive index contrast, GaN‐on‐insulator (GaNOI) …

We review the progress in the development of frequency converters based on three‐wave
mixing in whispering gallery resonators (WGRs). The theoretical description, given in a …

High-index-contrast optical waveguides are crucial for the development of photonic
integrated circuits with complex functionalities. Despite many similarities between optical …

Abstract Second-order (χ (2)) optical nonlinearity is one of the most common mechanisms for
modulating and generating coherent light in photonic devices. Due to strong photon …

We analyze a photonic integrated circuit (PIC) platform comprised of a crystalline Al_xGa_1-
xN optical guiding layer on an AlN substrate for the ultraviolet to visible (UV-vis) wavelength …

We propose, fabricate, and characterize the on-chip integration of suspended pn junction
InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same …

We perform comprehensive studies on the fundamental loss mechanisms in III-nitride
waveguides in the visible spectral region. Theoretical analysis shows that free carrier loss …

We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated
optics. High-confinement AlN microring resonators are realized by adopting a partially …