Design and modification of interfaces, always a critical issue for semiconductor devices, has
become a primary tool to harness the full potential of halide perovskite (HaP)-based …

Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Surfaces and heterojunction interfaces, where defects and energy levels dictate charge‐
carrier dynamics in optoelectronic devices, are critical for unlocking the full potential of …

Perovskite solar cells (PSCs) have been recognized as the best candidates for next-
generation photovoltaics. However, it is still challenging to fabricate PSCs that are both …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Controlling the surface and interface properties of halide perovskites (HaPs) materials is key
to improve performance and stability of HaP‐based optoelectronic devices such as solar …

We present a first-principles approach to deriving the relative energies of valence and
conduction bands at semiconductor interfaces, along with a model which permits a simple …

Despite an extensive research effort for over 60 years, an understanding of the origins of
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

Almost all metal-semiconductor or Schottky contacts exhibit rectifying behaviour which is
caused by a depletion layer on the semiconductor side of the interface. The electronic …